AMPLIFICADORES TRANSISTORIZADOS PDF

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This dissertation is centered in low noise amplifiers LNAs and it can be divided in three parts. In the first part it is made an introduction of LNAs in a CMOS technology and it is followed by a study of the state-of-art of these amplifiers. In the second part of this work it is done a review on noise figure whose definition is valid for a system, circuit or device.

After this review it is presented a noise figure analysis in fourpoles which the derived equations are used in LNA s design, it is also shown the Y-factor method for noise figure extraction of any fourpole. Thereafter the second part is finished with a case of study about on chip measurements using a transistor.

In the last part of the dissertation it is presented a LNA placed in a signal receiver system, then it is shown two amplifiers basic configurations: a configuration using the input transistor in common source and a second one using it in a common gate configuration.

Thereby, with means to introduce the reader on LNA's design, the basic parameters of performance of these amplifiers are derived for each shown configuration of the input transistor. Hereafter, with means to validate the learned concepts, it is designed three LNAs with channel length of 0,18mm and with different specifications.

One LNA has voltage restrictions, another has a power consumption restriction and the last amplifier is designed specially to operate in a ZigBee receiver. It is also presented the voltage and power restricted LNA's experimental results. Location of Repository. Topics: Engenharia eletrica, Radiofrequencia, Ruido eletrico, Amplificadores transistorizados, Transistores. OAI identifier: oai:repositorio. Suggested articles. Citations In: A capacitor cross-coupled common-gate low-noise amplifier.

An MOS transistor model for analog circuit design. Code of Federal Regulations 47 Telecommunication. Description of the noise performance of amplifiers and receiving systems.

Dioxide Battery DL Gate noise in field effect transistors at moderately high frequencies. Gigahertz transresistance amplifiers in fine line NMOS. GSM transceiver front-end circuits in 0. Microwave and Rf Design of Wireless Systems. Microwave Transistor Amplifiers: Analysis and Design. Noise Figures of Radio Receivers. Physics of Semiconductor Devices. Radio Frequency Integrated Circuit Design. RF Measurements of Die and Packages. RF Microelectronics. Start-up and frequency stability in highfrequency oscillators.

Teste de linearidade para o caso de alto ganho. The determination of device noise parameters. Theory of Noisy Fourpoles. Nobel Lecture, Understanding wide-band MOS transistors. Using capacitive cross-coupling technique in RF low noise amplifiers and down-conversion mixer design.

Very low-voltage 0.

ASTM G32 PDF

Amplificadores

This dissertation is centered in low noise amplifiers LNAs and it can be divided in three parts. In the first part it is made an introduction of LNAs in a CMOS technology and it is followed by a study of the state-of-art of these amplifiers. In the second part of this work it is done a review on noise figure whose definition is valid for a system, circuit or device. After this review it is presented a noise figure analysis in fourpoles which the derived equations are used in LNA s design, it is also shown the Y-factor method for noise figure extraction of any fourpole. Thereafter the second part is finished with a case of study about on chip measurements using a transistor. In the last part of the dissertation it is presented a LNA placed in a signal receiver system, then it is shown two amplifiers basic configurations: a configuration using the input transistor in common source and a second one using it in a common gate configuration.

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Amplificador transistorizado M1

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