Dt Sheet. IRFB Datasheet. IRFB www. Repetitive rating; pulse width limited by maximum junction temperature.
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November General Description. These N-Channel enhancement mode power field effect. This advanced technology has been especially tailored to. These devices are well. IRF Series. IRFS Series. V DSS. Drain-Source Voltage. Note 1. V GSS. Gate-Source Voltage. Note 2. I AR Avalanche Current. Note 3. Operating and Storage Temperature Range. Maximum lead temperature for soldering purposes,.
Thermal Characteristics. Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max. A, November Electrical Characteristics. Test Conditions. Min Typ Max Units. Off Characteristics. BV DSS. Drain-Source Breakdown Voltage. Breakdown Voltage Temperature. I DSS. Zero Gate Voltage Drain Current. I GSSF. I GSSR. On Characteristics.
V GS th. R DS on. Gate Threshold Voltage. Static Drain-Source. Dynamic Characteristics. C iss Input Capacitance. C oss. Output Capacitance. C rss Reverse Transfer Capacitance. Switching Characteristics. Turn-On Delay Time. Turn-Off Delay Time. Q g Total Gate Charge. Q gs Gate-Source Charge. Q gd Gate-Drain Charge. Note 4, 5. Q rr Reverse Recovery Charge. Note 4. Repetitive Rating : Pulse width limited by maximum junction temperature. Essentially independent of operating temperature.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. IRFB 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2.
IRF830B MOSFET. Datasheet pdf. Equivalent