IRF541 DATASHEET PDF

November These are N-Channel enhancement mode silicon gate. The y are adv anced po wer. These types can be operated directly from.

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November These are N-Channel enhancement mode silicon gate. The y are adv anced po wer. These types can be operated directly from. Formerly developmental type TA Ordering Information. NOTE: When ordering, use the entire part number. File Number. Drain to Source Breakdown Voltage Note 1. V DGR. Continuous Drain Current. Pulsed Drain Current Note 3. Gate to Source Voltage. Maximum Power Dissipation. Dissipation Derating Factor. Operating and Storage Temperature.

Maximum Temperature for Soldering. Leads at 0. Package Body for 10s, See Techbrief T pkg. This is a stress o nly rating and operation. Drain to Source Breakdown Voltage. Gate to Threshold Voltage.

Zero Gate Voltage Drain Current. On-State Drain Current Note 2. BV DSS ,. Figure 7. Gate to Source Leakage Current. Drain to Source On Resistance Note 2. Forward Transconductance Note 2.

Turn-On Delay Time. Rise Time. Turn-Off Delay Time. Fall Time. Total Gate Charge. Gate to Source Charge. Gate Charge is Essentially Independent of Op-. Q gs erating Temperature. Download IRF Datasheet.

All of these po wer MOSFETs are designed f or applications such as s witching regulators, switching conver- tors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s witching tr ansistors requir ing high speed and lo w gate drive power. These types can be operated directly from integrated circuits. P D Dissipation Derating Factor. NOTE: 1.

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