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Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliabiltity of Power MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO package is preferred for commercial-industrial applications where higher power levels preclude the use of TO devices. The TO is similar but superior to the earlier TO package because its isolated mounting hole. Repetitive rating; pulse width limited by maximum junction temperature see fig.
Vishay Siliconix. Q g Max. Q gs nC. Q gd nC. Lead Pb -free. These device improvements combined with the proven. The TO package is preferred for commercial-industrial. TO devices. The TO is similar but superior to the. Drain-Source Voltage. Gate-Source Voltage. Continuous Drain Current. Pulsed Drain Current a. Linear Derating Factor. Single Pulse Avalanche Energy b. Repetitive Avalanche Current a. Repetitive Avalanche Energy a. Maximum Power Dissipation.
Operating Junction and Storage Temperature Range. Soldering Recommendations Peak Temperature. Mounting Torque. Document Number: A, Jul No Preview Available! Maximum Junction-to-Ambient. Case-to-Sink, Flat, Greased Surface.
R thJA. R thCS. Maximum Junction-to-Case Drain. R thJC. Drain-Source Breakdown Voltage. V DS Temperature Coefficient. Gate-Source Threshold Voltage. Gate-Source Leakage. Zero Gate Voltage Drain Current. Drain-Source On-State Resistance. Forward Transconductance. V GS th. I GSS. I DSS. R DS on. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Total Gate Charge. Gate-Source Charge. Gate-Drain Charge. Turn-On Delay Time.
Rise Time. Turn-Off Delay Time. Fall Time. C iss. C oss. C rss. Internal Drain Inductance. Internal Source Inductance. Drain-Source Body Diode Characteristics. Between lead,. Continuous Source-Drain Diode Current. Pulsed Diode Forward Current a. Body Diode Voltage. Body Diode Reverse Recovery Time.
Previous Datasheet. Next Data Sheet. Ultra Low Gate Charge. Reduced Gate Drive Requirement. Enhanced 30V V gs Rating.