2SK2645 DATASHEET PDF

FAP-2S Series. High speed switching. Low on-resistance. No secondary breadown. Low driving power.

Author:Akinobei Yozragore
Country:Montserrat
Language:English (Spanish)
Genre:Software
Published (Last):13 December 2006
Pages:90
PDF File Size:5.8 Mb
ePub File Size:20.64 Mb
ISBN:389-8-40070-913-9
Downloads:83501
Price:Free* [*Free Regsitration Required]
Uploader:Brall



Continous Drain Current. Pulsed Drain Current. I D puls. Avalanche Energy. Power Dissipation. Operating and Storage Temperature Range. T stg. Test conditions. Drain-Source Breakdown-Voltage. Gate Threshhold Voltage. V GS th. Zero Gate Voltage Drain Current. I DSS. Gate Source Leakage Current. I GSS. Drain Source On-State Resistance. R DS on. Forward Transconductance. Input Capacitance. C iss. Output Capacitance.

C oss. Reverse Transfer Capacitance. C rss. Avalanche Capability. Diode Forward On-Voltage. Reverse Recovery Time.

Reverse Recovery Charge. Thermal Resistance. R th ch-a. R th ch-c. Collmer Semiconductor - P. Box - Dallas TX - - No Preview Available! Typical Output Characteristics. Drain-Source On-State Resistance vs. Typical Transfer Characteristics. Typical Forward Transconductance vs. Gate Threshold Voltage vs. Typical Capacitances vs. Typical Gate Charge Characteristic. Forward Characteristics of Reverse Diode. Avalanche Energy Derating. Safe Operation Area. Transient Thermal impedance.

This specification is subject to change without notice! Part Number. View PDF for Mobile. Fuji Electric. Site map. Contact us. Buy Components. Privacy Policy.

TRIGONOMETRIA DE GRANVILLE PDF

Fuji Electric

.

D&D 3.5 PSION HANDBOOK PDF

N-CHANNEL SILICON POWER MOSFET

.

2N2484 DATASHEET PDF

K2645-01MR 2SK2645-01MR. Datasheet pdf. Equivalent

.

ESTIRAMIENTOS BALISTICOS PDF

2SK2645 - TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,8A I(D),TO-220

.

Related Articles