CM75DUM 12F PDF

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Tc measured point. Dimensions in mm. TAB V CES. V GES. I E Note 1. I EM Note 1. P C Note 3. T stg. V iso. Collector-emitter voltage. Gate-emitter voltage. Collector current. Emitter current. Maximum collector dissipation. Junction temperature. Storage temperature. Isolation voltage.

Torque strength. G-E Short. C-E Short. Charged part to base plate, AC 1 min. Main Terminal M5. Mounting holes M6. Typical value. Note 2. I CES. Collector cutoff current. Test conditions. I GES. V CE sat. C ies. C oes. C res.

Q rr Note 1. V EC Note 1. R th j-c Q. R th j-c R. R th c-f. Gate leakage current. Collector-emitter saturation voltage. Input capacitance. Output capacitance. Reverse transfer capacitance. Total gate charge. Turn-on delay time. Turn-on rise time. Turn-off delay time.

Turn-off fall time. Reverse recovery time. Reverse recovery charge. Emitter-collector voltage. Contact thermal resistance. Thermal resistance. External gate resistance. Tc measured point is just under the chips. Note 1. Pulse width and repetition rate should be such that the device junction temp. T j does not exceed T jmax rating. Limits Typ.

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